WebbResist: Tokyo Ohka Kogyo (Co.) OFPR-5000 Resist film thickness: 1μm Exposure Syst Exposure system The scan exposure by synchronous scanning of DMD and stage … WebbA line mask pattern was drawn using a g-line positive photoresist (Tokyo Ohka Kogyo, OFPR-5000 23cP) on a Si(110) substrate. The lines were parallel to the [110 ] direction. The dry etching of Si with a photoresist mask was performed using a reactive ion etching (RIE) system (Samco, RIE-10 NR) with SF 6gas.
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Webb22 aug. 1989 · The top layer pattern could be transferred to the bottom layer (hard baked positive resist OFPR-5000) using oxygen-RIE. The etching rate for the silicon … oxfordshire county council applications
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WebbThe top layer pattern could be transferred to the bottom layer (hard baked positive resist OFPR-5000) using oxygen-RIE. The etching rate for the silicon containing resist was 35 … WebbMaximum coating uniformity is typically attained between the spin speeds of 3,500–5,500 rpm. The dispersion curve and Cauchy equation displayed in Figure 3describe how the refractive index of the pho- toresist film varies as a function of the wavelength of light incident upon the film. Webb1 feb. 2005 · The insulating part of working electrodes were fabricated by coating with 1.5 μm thick photoresist (OFPR-5000, Tokyo Ohka Kogyo Co., Ltd., Tokyo, Japan) controlled by photolithography. Electrochemical measurements were performed with a dual potentiostat (ALS model 832a, BAS Inc., Tokyo, Japan). oxfordshire county council audit committee